Series employs Schottky Barrier principle in large area metal-to-silicon power diode. Features chrome barrier metal, epitaxial construction with oxide passivation. Suitable for low-voltage, high-frequency inverters and polarity protection diodes
Designed for high-voltage, high-speed power switching inductive circuits. Operates at 400V and 300V collector-emitter voltages. Features reverse bias SOA with inductive loads at 100°C. Supports 3-12A inductive switching with 120ns typical transition time. Includes 700V blocking capability
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Maximum power dissipation: 125W. Maximum drain-source voltage: 500V. Maximum gate-source voltage: 30V. Maximum drain current: 5A. Maximum junction temperature: 150°C
PWM represents signals as rectangular waves with varying duty cycle. Controls average power or amplitude by switching supply between 0-100%. Duty cycle indicates proportion of time signal is on, expressed as percentage
Voltage doubler charges capacitors to produce twice the input voltage. Simple AC-to-DC doublers use diodes, while DC-to-DC doublers require driving circuits. Voltage doublers can be viewed as single stages of higher order multipliers