Maximum reverse voltage rating of 1000V. Average rectified forward current of 1.0A. Non-repetitive peak forward surge current of 30A. Storage temperature range from -65 to +150°C
Low profile package with glass passivated pellet chip junction. High efficiency with ultra-fast recovery times. Low forward voltage and power losses. MSL level 1 compliance with 260°C maximum peak temperature. AEC-Q101 qualified available for automotive applications
Glass passivated chip junction with ultra-fast reverse recovery time. Low forward voltage drop and switching losses. High forward surge capability and solder dip resistance up to 275°C
Subminiature axial lead rectifiers for general-purpose low-power applications. Available in plastic bags (1000 units/bag), tape/reel (5000 units/reel), and fan-fold packaging (3000 units/box). Pb-free packages are also available
Series employs Schottky Barrier principle in large area metal-to-silicon power diode. Features chrome barrier metal, epitaxial construction with oxide passivation. Suitable for low-voltage, high-frequency inverters and polarity protection diodes
P-n junction combines p-type and n-type semiconductors in a single crystal. N-type contains electrons, p-type contains electron holes. Creates depletion region near junction where electrons fill holes